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SIR67-21C/TR8
Features
? Peak wavelength λ p=875nm.
? Low forward voltage.
? Compatible with infrared and vapor phase reflow solder process.
? Package in 8mm tape on 7” diameter reels.
? Pb free
? The product itself will remain within RoHS compliant version.
Description
? SIR67-21C/TR8 is an infrared emitting diode in miniature SMD package which is molded in a water
clear plastic with flat top view lens.
? The device is spectrally matched with silicon photodiode and phototransistor.
Applications
? Floppy disk drive
? Optoelectronic switch
? Camera
? VCR
? Video
? Smoke detector
Device Selection Guide
Device No.
SIR67-21C/TR8
Chip Material
GaAlAs
Lens Color
Water clear
Revision Copyright ?
Release Date:2013-06-03 15:22:49.0
1 :1
LifecyclePhase:
2010, Everlight All Rights Reserved. Release Date : MAY.20.2013. Issue No: DIR-0000957 www.everlight.com
Expired Period: Forever
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相关代理商/技术参数
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SIR698DP-T1-GE3 功能描述:MOSFET 100V 7.5A 23W 195mOhm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR770DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
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SIR774DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET with Schottky Diode
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SIR788DP-T1-GE3 功能描述:MOSFET 30V 60A 48W 3.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube